Intern - F10 PEE CVD

Overview

• Our vision is to transform how the world uses information to enrich life for all.
• Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners.
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• Description: Crater defects in the LAM TEOS CVD process present yield and integration risks in high‑volume manufacturing.
• This project focuses on understanding crater defect mechanisms and driving defect reduction through data analysis and controlled process optimization in F10.
• Scope: – Understand LAM TEOS CVD process flow and chamber condition – Analyze inline defect and yield data to characterize crater defects – Support limited experiments (DOE / split runs) under PEE guidance – Evaluate defect improvement vs.
• film performance impact • Deliverable: Experimental results demonstrating defect reduction opportunity with assessment of impact on critical film metrics • Skillset Require: Data analysis skills, structured problem-solving and strong learning mindset, clear technical communication skills About Micron Technology, Inc.
• We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all.
• With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron® and Crucial® brands.
• Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience.
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