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What You'll Do
- applying device physics principles, characterizing devices using DC/RF methods, and utilizing the advanced HiCUM L2 V3.0 industry standard model to create compact models for RF applications.
- Additionally, modeling effects such as avalanche at high current densities and non-quasistatic phenomena will be compared with measurement data.
- Essential Responsibilities include: Analyze measurement data for DC and RF characteristics.
- Develop HiCUM L2 V3.0 based compact model for HBT device.
- Extract compact model parameters for advanced device physics.
- Develop a procedure to incorporate new physical effects in the compact model and propose new models/modeling methods if applicable.
- Presentation to technical team after the project completion.
- Other Responsibilities: Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.
- Required Qualifications: Education – At least a second-year graduate student at time of application and actively pursuing a Master’s, or PhD in Electrical Engineering, Microelectronics or related field through an accredited degree program during the time of internship.
- Must have at least an overall 3.5 GPA and be in good academic standing.
- Language Fluency - English (Written & Verbal) Ability to work at least 20 to 40 hours per week during the internship.
Nice to Have
- Prior related internship or co-op experience Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
- Project management skills, i.e., the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity.
- Strong written and verbal communication skills Strong planning & organizational skills Semiconductor device physics / characterization knowledge Familiarity of Device Compact models Familiarity with industry standard compact model: High Current Model (HiCUM) Familiarity with design simulation tools such as Cadence Spectre or Keysight ADS Familiarity with Design Layout using the Cadence Virtuosa, ADS or other design tools Data analysis and problem solving Knowledge with shell scripting, multi-paradigm (Matlab/R) and high-level programming languages (Python/Perl/Lisp) #InternshipProgramUS Expected Salary Range $20.00 - $40.00 Expected Salary Range $0.00 - $0.00 The exact Salary will be determined based on qualifications, experience and location.
- If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of your request and your contact information.
- Requests for accommodation will be considered on a case-by-case basis.
- Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address.
- An offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations.
- GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential.
- GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people.
- Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory.
- All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law
Tools & Skills
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Specialisation
Open roles at GlobalFoundries
659 positions
Job ID
/job/USA---Vermont---Essex-Junction/SiGe-HBT-Device-Modelling-Intern--Summer-2027-_JR-2604271
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